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TC1411 TSH94I MMBT2907 2N5301 2N5301 ON1175 X7473U 28122
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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1894
DESCRIPTION With TO-3PFa package High DC current gain Low collector saturation voltage Complement to type 2SB1254 APPLICATIONS Power amplification Optimum for 60W high-fidelity output applications
PINNING PIN 1 2 3 Base Collector DESCRIPTION
Absolute maximum ratings(Ta=25ae )
SYMBOL VCBO VCEO VEBO IC ICP PARAMETER
TOR NDU ICO E SEM ANG INCH
Emitter CONDITIONS VALUE 160 Collector-base voltage Open emitter Collector-emitter voltage Open base 140 5 7 12 TC=25ae 70 Emitter-base voltage Collector current Collector current-peak Open collector
UNIT V V V A A
PC
Collector power dissipation 3
W
Tj Tstg
Junction temperature Storage temperature
150 -55~150 ae
ae
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=30mA ; IB=0 IC=6A ;IB=6mA IC=6A ;IB=6mA VCB=160V; IE=0 VCE=140V; IB=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=6A ; VCE=5V IC=0.5A ; VCE=10V;f=1MHz 2000 5000 20 MIN 140 TYP.
2SD1894
SYMBOL V(BR)CEO VCEsat VBEsat ICBO ICEO IEBO hFE-1 hFE -2 fT
MAX
UNIT V
2.5 3.0 100 100 100 |I |I |I
V V A A A
30000
Switching times ton ts tf
NDU ICO E SEM ANG INCH
Turn-on time Storage time IC=6A; VCC=50V IB1=-IB2=6mA Fall time
TOR
MHz
2.5 5.0 2.5
|I |I |I
s s s
hFE-2 Classifications Q 5000-15000 P 8000-30000
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD1894
TOR NDU ICO E SEM ANG INCH
Fig.2 Outline dimensions (unindicated tolerance:A 0.30mm)
3


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